NCE20TD65BD Todos los transistores

 

NCE20TD65BD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE20TD65BD

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 163 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 16 nS

Coesⓘ - Capacitancia de salida, typ: 48 pF

Encapsulados: TO-220

 Búsqueda de reemplazo de NCE20TD65BD IGBT

- Selección ⓘ de transistores por parámetros

 

NCE20TD65BD datasheet

 ..1. Size:1085K  ncepower
nce20td65bd.pdf pdf_icon

NCE20TD65BD

Pb Free Product NCE20TD65B 650V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching

 6.1. Size:743K  ncepower
nce20td60bp.pdf pdf_icon

NCE20TD65BD

PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 6.2. Size:764K  ncepower
nce20td60bd nce20td60b nce20td60bf.pdf pdf_icon

NCE20TD65BD

 6.3. Size:743K  ncepower
nce20td60bt.pdf pdf_icon

NCE20TD65BD

PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

Otros transistores... NCE15TD65BP , NCE15TD65BT , NCE160ED120VTP , NCE160ED120VTP4 , NCE160ED65VTP , NCE160ED65VTP4 , NCE20TD60BP , NCE20TD60BT , FGH60N60SFD , NCE20TH60BF , NCE25TC120HD , NCE25TD120BD , NCE25TD120LP , NCE25TD120VD , NCE25TD120VT , NCE25TD120VTP , NCE25TD120W .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

21270 transistor | k3569 | irf640 datasheet | c945 transistor equivalent | irfz44 datasheet | tip3055 transistor | irf530 datasheet | 2sc2625

 

 

↑ Back to Top
.