NCE20TD65BD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

NCE20TD65BD Specs and Replacement

Type Designator: NCE20TD65BD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 163 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 48 pF

Package: TO-220

NCE20TD65BD Substitution

- IGBTⓘ Cross-Reference Search

NCE20TD65BD datasheet

..1. Size:1085K ncepower
nce20td65bd.pdf pdf_icon

Pb Free Product NCE20TD65B 650V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒

6.1. Size:743K ncepower
nce20td60bp.pdf pdf_icon

PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat ... See More ⇒

6.2. Size:764K ncepower
nce20td60bd nce20td60b nce20td60bf.pdf pdf_icon