NCE40ED120VT Todos los transistores

 

NCE40ED120VT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE40ED120VT
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 364 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 37 nS
   Coesⓘ - Capacitancia de salida, typ: 104 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

NCE40ED120VT Datasheet (PDF)

 ..1. Size:1189K  ncepower
 nce40ed120vt.pdf pdf_icon

NCE40ED120VT

NCE40ED120VT1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 0.1. Size:1203K  ncepower
 nce40ed120vtp.pdf pdf_icon

NCE40ED120VT

NCE40ED120VTP1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 7.1. Size:783K  ncepower
 nce40ed65bt.pdf pdf_icon

NCE40ED120VT

NCE40ED65BT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40

 7.2. Size:1119K  ncepower
 nce40ed65vt.pdf pdf_icon

NCE40ED120VT

NCE40ED65VT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 40

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: VS-GB600AH120N | SKM150GAR123D | SKM100GAL12T4 | AUIRG4PH50S | 6MBI100VX-120-50 | SMBL1G300US60 | IRGIB10B60KD1P

 

 
Back to Top

 


 
.