All IGBT. NCE40ED120VT Datasheet

 

NCE40ED120VT Datasheet and Replacement


   Type Designator: NCE40ED120VT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 364 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 37 nS
   Coesⓘ - Output Capacitance, typ: 104 pF
   Qg ⓘ - Total Gate Charge, typ: 144 nC
   Package: TO247
 

 NCE40ED120VT substitution

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NCE40ED120VT Datasheet (PDF)

 ..1. Size:1189K  ncepower
 nce40ed120vt.pdf pdf_icon

NCE40ED120VT

NCE40ED120VT1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 0.1. Size:1203K  ncepower
 nce40ed120vtp.pdf pdf_icon

NCE40ED120VT

NCE40ED120VTP1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 7.1. Size:783K  ncepower
 nce40ed65bt.pdf pdf_icon

NCE40ED120VT

NCE40ED65BT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40

 7.2. Size:1119K  ncepower
 nce40ed65vt.pdf pdf_icon

NCE40ED120VT

NCE40ED65VT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 40

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - NCE40ED120VT transistor datasheet

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