NCE40ED65VT Todos los transistores

 

NCE40ED65VT IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE40ED65VT

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 245 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 13 nS

Coesⓘ - Capacitancia de salida, typ: 67 pF

Encapsulados: TO247

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NCE40ED65VT datasheet

 ..1. Size:1119K  ncepower
 nce40ed65vt.pdf pdf_icon

NCE40ED65VT

NCE40ED65VT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 40

 5.1. Size:783K  ncepower
 nce40ed65bt.pdf pdf_icon

NCE40ED65VT

NCE40ED65BT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40

 5.2. Size:704K  ncepower
 nce40ed65bf.pdf pdf_icon

NCE40ED65VT

NCE40ED65BF 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40

 7.1. Size:1203K  ncepower
 nce40ed120vtp.pdf pdf_icon

NCE40ED65VT

NCE40ED120VTP 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC

MOSTRAR MÁS

Otros transistores... NCE25TD135LP , NCE30TD65BD , NCE30TD65BP , NCE30TD65BT , NCE40ED120VT , NCE40ED120VTP , NCE40ED65BF , NCE40ED65BT , FGPF4633 , NCE40ED75VT , NCE40ER65BP , NCE40ER65BPF , NCE40ER65BT , NCE40EU65UT , NCE40T120VT , NCE40T120WD , NCE40T60BP .

 

 

 


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