Справочник IGBT. NCE40ED65VT

 

NCE40ED65VT Даташит. Аналоги. Параметры и характеристики.


   Наименование: NCE40ED65VT
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 13 nS
   Coesⓘ - Выходная емкость, типовая: 67 pF
   Тип корпуса: TO247
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NCE40ED65VT Datasheet (PDF)

 ..1. Size:1119K  ncepower
 nce40ed65vt.pdf pdf_icon

NCE40ED65VT

NCE40ED65VT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 40

 5.1. Size:783K  ncepower
 nce40ed65bt.pdf pdf_icon

NCE40ED65VT

NCE40ED65BT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40

 5.2. Size:704K  ncepower
 nce40ed65bf.pdf pdf_icon

NCE40ED65VT

NCE40ED65BF650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40

 7.1. Size:1203K  ncepower
 nce40ed120vtp.pdf pdf_icon

NCE40ED65VT

NCE40ED120VTP1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE25TD135LP , NCE30TD65BD , NCE30TD65BP , NCE30TD65BT , NCE40ED120VT , NCE40ED120VTP , NCE40ED65BF , NCE40ED65BT , TGAN60N60F2DS , NCE40ED75VT , NCE40ER65BP , NCE40ER65BPF , NCE40ER65BT , NCE40EU65UT , NCE40T120VT , NCE40T120WD , NCE40T60BP .

History: IXGR50N160H1 | STGWA30IH65DF

 

 
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