IXGP15N100C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP15N100C
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5(max) V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 95 pF
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
IXGP15N100C Datasheet (PDF)
ixgp15n100c.pdf

VCES =1000 VIXGA 15N100CIGBTIC25 = 30 AIXGP 15N100CVCE(sat) = 3.5 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 ATO-263 AA (IXGA)
ixga15n100c ixgp15n100c.pdf

VCES =1000 VIXGA 15N100CIGBTIC25 = 30 AIXGP 15N100CVCE(sat) = 3.5 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 ATO-263 AA (IXGA)
ixgp15n120b.pdf

IXGA 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGP 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 ATO-263 AA
ixgp15n120b2.pdf

VCES =1200 VIXGA 15N120B2HiPerFASTTM IGBTIC25 = 30 AIXGP 15N120B2VCE(sat) = 3.5 VOptimized for 10-25 KHz hardtfi(typ) = 137 nsswitching and up to 150 KHzresonant switchingSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 2
Otros transistores... IXGN50N60BD3 , IXGN60N60 , IXGP12N100 , IXGP12N100A , IXGP12N100AU1 , IXGP12N100U1 , IXGP12N60C , IXGP12N60CD1 , IHW15N120R3 , IXGP15N120B , IXGP20N100 , IXGP20N60B , IXGP7N60B , IXGP7N60C , IXGP8N100 , IXGR32N60C , IXGR32N60CD1 .
History: IGW40N60H3 | MPBW15N120BF | MPBQ50N120B
History: IGW40N60H3 | MPBW15N120BF | MPBQ50N120B



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