NCE60TD120UT IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60TD120UT
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 833 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 320 pF
Encapsulados: TO-247
Búsqueda de reemplazo de NCE60TD120UT IGBT
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NCE60TD120UT datasheet
nce60td120ut.pdf
PbFreeProduct NCE60TD120UT 1200V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce60td65bt.pdf
PbFreeProduct NCE60TD65BT 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce60td60bp.pdf
Pb Free Product NCE60TD60BP 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce60td60bt.pdf
Pb Free Product NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
Otros transistores... NCE50ED65VT , NCE50EU65UT , NCE50TD120BP , NCE50TD120BT , NCE50TD120VT , NCE50TD120VTP , NCE50TD120WT , NCE50TD120WW , RJH60F5DPQ-A0 , NCE60TD65BP , NCE60TD65BT4 , NCE75ED120VT , NCE75ED120VT4 , NCE75ED120VTP , NCE75ED120VTP4 , NCE75ED65BT , NCE75ED65VT .
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