NCE60TD120UT Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE60TD120UT
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 833 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 17 nS
Coesⓘ - Выходная емкость, типовая: 320 pF
Qg ⓘ - Общий заряд затвора, typ: 450 nC
Тип корпуса: TO-247
Аналог (замена) для NCE60TD120UT
NCE60TD120UT Datasheet (PDF)
nce60td120ut.pdf

PbFreeProduct NCE60TD120UT 1200V, 60A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw
nce60td65bt.pdf

PbFreeProductNCE60TD65BT650V, 60A, Trench FS II Fast IGBTGeneral Description:Using NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 650V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce60td60bp.pdf

Pb Free ProductNCE60TD60BP600V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce60td60bt.pdf

Pb Free ProductNCE60TD60BT600V, 60A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 600V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
Другие IGBT... NCE50ED65VT , NCE50EU65UT , NCE50TD120BP , NCE50TD120BT , NCE50TD120VT , NCE50TD120VTP , NCE50TD120WT , NCE50TD120WW , GT30J122 , NCE60TD65BP , NCE60TD65BT4 , NCE75ED120VT , NCE75ED120VT4 , NCE75ED120VTP , NCE75ED120VTP4 , NCE75ED65BT , NCE75ED65VT .



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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