NCE75TD120BTP4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE75TD120BTP4
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 833 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 327 pF
Paquete / Cubierta: TO-247P-4L
Búsqueda de reemplazo de NCE75TD120BTP4 - IGBT
NCE75TD120BTP4 Datasheet (PDF)
nce75td120btp4.pdf
Pb Free ProductNCE75TD120BTP41200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce75td120btp.pdf
Pb Free ProductNCE75TD120BTP1200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce75td120bt4.pdf
Pb Free ProductNCE75TD120BT41200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
nce75td120bt.pdf
Pb Free ProductNCE75TD120BT1200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching
Otros transistores... NCE75ED65VTP , NCE75ED75VT , NCE75ED75VT4 , NCE75EU65UT , NCE75T120VT , NCE75TD120BT , NCE75TD120BT4 , NCE75TD120BTP , YGW75N65F1 , NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , NCE80TD65BT4 , BLG10T65FUL-D , BLG15T65FUA-A .
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Recientemente añadidas las descripciónes de los transistores
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