NCE75TD120BTP4 Spec and Replacement
Type Designator: NCE75TD120BTP4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 833 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 327 pF
Qg ⓘ - Total Gate Charge, typ: 572 nC
Package: TO-247P-4L
NCE75TD120BTP4 Substitution
NCE75TD120BTP4 specs
nce75td120btp4.pdf
Pb Free Product NCE75TD120BTP4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching... See More ⇒
nce75td120btp.pdf
Pb Free Product NCE75TD120BTP 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒
nce75td120bt4.pdf
Pb Free Product NCE75TD120BT4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒
nce75td120bt.pdf
Pb Free Product NCE75TD120BT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒
Specs: NCE75ED65VTP , NCE75ED75VT , NCE75ED75VT4 , NCE75EU65UT , NCE75T120VT , NCE75TD120BT , NCE75TD120BT4 , NCE75TD120BTP , KGF75N65KDF , NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , NCE80TD65BT4 , BLG10T65FUL-D , BLG15T65FUA-A .
Keywords - NCE75TD120BTP4 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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