IXGP7N60B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP7N60B 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 54 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 14 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 10 nS
Coesⓘ - Capacitancia de salida, typ: 50 pF
Encapsulados: TO220
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IXGP7N60B datasheet
ixga7n60b ixgp7n60b.pdf
VCES = 600 V HiPerFASTTM IGBT IXGA 7N60B IC25 = 14 A IXGP 7N60B VCE(sat) = 2 V tfi = 150 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25 C 14 A IC90 TC = 90 C 7 A ICM TC = 25 C, 1 ms 30 A G C (TAB) E SSOA
ixgp7n60b.pdf
VCES = 600 V HiPerFASTTM IGBT IXGA 7N60B IC25 = 14 A IXGP 7N60B VCE(sat) = 2 V tfi = 150 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25 C 14 A IC90 TC = 90 C 7 A ICM TC = 25 C, 1 ms 30 A G C (TAB) E SSOA
ixgp7n60bd1.pdf
Advanced Technical Information IXGA 7N60BD1 VCES = 600 V HiPerFASTTM IGBT IXGP 7N60BD1 IC25 = 14 A with Diode VCE(sat) = 2.0 V tfi = 150ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C 14 A TO-263 AA (IXGA) IC90 TC = 90 C 7
ixgp7n60cd1.pdf
IXGA 7N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGP 7N60CD1 IC25 = 14 A with Diode VCE(sat)typ = 2.0 V LightspeedTM Series tfi = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C 14 A TO-263 AA (IXGA) IC90 TC
Otros transistores... IXGP12N100AU1, IXGP12N100U1, IXGP12N60C, IXGP12N60CD1, IXGP15N100C, IXGP15N120B, IXGP20N100, IXGP20N60B, GT30F124, IXGP7N60C, IXGP8N100, IXGR32N60C, IXGR32N60CD1, IXGR40N60BD1, IXGR60N60U1, IXGT15N120B, IXGT15N120BD1
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