IXGP7N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP7N60B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 54 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 14 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 10 nS
Coesⓘ - Capacitancia de salida, typ: 50 pF
Qgⓘ - Carga total de la puerta, typ: 25 nC
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
IXGP7N60B Datasheet (PDF)
ixga7n60b ixgp7n60b.pdf

VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA
ixgp7n60b.pdf

VCES = 600 VHiPerFASTTM IGBT IXGA 7N60BIC25 = 14 AIXGP 7N60BVCE(sat) = 2 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings TO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263 AA (IXGA)IC25 TC = 25C 14 AIC90 TC = 90C 7 AICM TC = 25C, 1 ms 30 AGC (TAB)ESSOA
ixgp7n60bd1.pdf

Advanced Technical InformationIXGA 7N60BD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60BD1 IC25 = 14 Awith DiodeVCE(sat) = 2.0 Vtfi = 150nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC = 90C 7
ixgp7n60cd1.pdf

IXGA 7N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGP 7N60CD1 IC25 = 14 Awith DiodeVCE(sat)typ = 2.0 VLightspeedTM Seriestfi = 45 nsPreliminary DataSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C 14 ATO-263 AA (IXGA)IC90 TC
Otros transistores... IXGP12N100AU1 , IXGP12N100U1 , IXGP12N60C , IXGP12N60CD1 , IXGP15N100C , IXGP15N120B , IXGP20N100 , IXGP20N60B , GT30F124 , IXGP7N60C , IXGP8N100 , IXGR32N60C , IXGR32N60CD1 , IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 .
History: HGT1S20N35G3VLS9A | MPBW20N65EF | IXGH40N30BS
History: HGT1S20N35G3VLS9A | MPBW20N65EF | IXGH40N30BS



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