BLG15T65FUA-B Todos los transistores

 

BLG15T65FUA-B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLG15T65FUA-B
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 78 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 15 nS
   Coesⓘ - Capacitancia de salida, typ: 41 pF
   Qgⓘ - Carga total de la puerta, typ: 38 nC
   Paquete / Cubierta: TO-263
     - Selección de transistores por parámetros

 

BLG15T65FUA-B Datasheet (PDF)

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BLG15T65FUA-B

BLG15T65FUA IGBT 1Description Step-Down Converter BLG15T65FUA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V

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BLG15T65FUA-B

BLG15T65FUL IGBT 1Description Step-Down Converter BLG15T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized swi hing CE(sat) tcperformance and low gate charge Q . The IGBT is gsuitable device for BLDC, UPS, and low V CE(sat)applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 1

Otros transistores... NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , NCE80TD65BT4 , BLG10T65FUL-D , BLG15T65FUA-A , RJP63K2DPP-M0 , BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B .

History: MMG150S120B6TN | APTGF25X120E2 | GT80J101 | BLG40T120FUH-F | APTLGF210U120T

 

 
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