BLG15T65FUA-B PDF Specs and Replacement
Type Designator: BLG15T65FUA-B
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 78 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 41 pF
Package: TO-263
BLG15T65FUA-B Substitution
BLG15T65FUA-B PDF specs
blg15t65fua-a blg15t65fua-b blg15t65fua-p.pdf
BLG15T65FUA IGBT 1 Description Step-Down Converter BLG15T65FUA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for BLDC, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V ... See More ⇒
blg15t65ful-b blg15t65ful-p blg15t65ful-a.pdf
BLG15T65FUL IGBT 1 Description Step-Down Converter BLG15T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized swi hing CE(sat) tc performance and low gate charge Q . The IGBT is g suitable device for BLDC, UPS, and low V CE(sat) applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CES I 1... See More ⇒
Specs: NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , NCE80TD65BT4 , BLG10T65FUL-D , BLG15T65FUA-A , RJP63K2DPP-M0 , BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B .
Keywords - BLG15T65FUA-B transistor spec
BLG15T65FUA-B cross reference
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