BLG15T65FUA-B Datasheet. Specs and Replacement

Type Designator: BLG15T65FUA-B  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 78 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 41 pF

Package: TO-263

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BLG15T65FUA-B datasheet

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BLG15T65FUA-B

BLG15T65FUA IGBT 1 Description Step-Down Converter BLG15T65FUA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for BLDC, UPS, and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V ... See More ⇒

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BLG15T65FUA-B

BLG15T65FUL IGBT 1 Description Step-Down Converter BLG15T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized swi hing CE(sat) tc performance and low gate charge Q . The IGBT is g suitable device for BLDC, UPS, and low V CE(sat) applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CES I 1... See More ⇒

Specs: NCE75TD120VT, NCE75TD120WT, NCE75TD120WT4, NCE75TD120WW, NCE80TC65BT, NCE80TD65BT4, BLG10T65FUL-D, BLG15T65FUA-A, RJP63K2DPP-M0, BLG15T65FUA-P, BLG15T65FUL-B, BLG15T65FUL-P, BLG15T65FUL-A, BLG20T65FDLA-A, BLG20T65FDLA-P, BLG20T65FDLA-F, BLG20T65FDLA-B

Keywords - BLG15T65FUA-B transistor spec

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