IXGR32N60C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGR32N60C
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 140
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 45
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.3
Tensión máxima de puerta-umbral |VGE(th)|, V: 5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 20
Capacitancia de salida (Cc), typ, pF: 190
Carga total de la puerta (Qg), typ, nC: 110
Paquete / Cubierta: PLUS247
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IXGR32N60C Datasheet (PDF)
ixgr32n60c.pdf
IXGR 32N60C VCE = 600 VHiPerFASTTM IGBTIC25 = 45 ALightspeed SeriesVCE(sat) = 2.7 VISOPLUS247TM packagetfi typ = 55 ns(Electrically Isolated Back Side)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCIsolated Backside*VGEM Transie
ixgr32n60cd1.pdf
VCES = 600 VHiPerFASTTM IGBT IXGR 32N60CD1IC25 = 45 Awith DiodeVCE(SAT) = 2.7 VISOPLUS247TMtfi(typ) = 55 ns(Electrically Isolated Backside)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR)E 153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25
ixgr32n170h1.pdf
IXGR 32N170H1VCES = 1700 VHigh VoltageIC25 = 38 AIGBT with DiodeVCE(sat) = 3.5 VElectrically Isolated Tabtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25C3
ixgr32n90b2d1.pdf
Advance Technical InformationVCES = 900 VIXGR 32N90B2D1HiPerFASTTM IGBTIC25 = 47 Awith Fast DiodeVCE(sat) = 2.9 Vtfi typ = 150 nsElectrically Isolated BaseSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)E153432VCES TJ = 25OC to 150OC 900 VVCGR TJ = 25OC to 150OC; RGE = 1 M 900 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25OC47 A ISOLATED T
ixgr32n170ah1.pdf
Advance Technical InformationIXGR 32N170AH1VCES = 1700 VHigh VoltageIC25 = 26 AIGBT with DiodeVCE(sat) = 5.2 VElectrically Isolated Tabtfi(typ) = 50 nsSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC
Otros transistores... IXGP12N60CD1 , IXGP15N100C , IXGP15N120B , IXGP20N100 , IXGP20N60B , IXGP7N60B , IXGP7N60C , IXGP8N100 , GT50JR22 , IXGR32N60CD1 , IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ