BLG50T65FDLA-K - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLG50T65FDLA-K
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 44 nS
Coesⓘ - Capacitancia de salida, typ: 158 pF
Paquete / Cubierta: TO-3PF
- Selección de transistores por parámetros
BLG50T65FDLA-K Datasheet (PDF)
blg50t65fdla-f blg50t65fdla-k blg50t65fdla-w.pdf

BLG50T65FDLA IGBT 1Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6
blg50t65fdka-f.pdf

BLG50T65FDKA IGBT 1Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6
blg50t65fla-f.pdf

BLG50T65FLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6
blg50t65fka-f.pdf

BLG50T65FKA IGBT 1Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650
Otros transistores... BLG40T65FDL-W , BLG40T65FUK-W , BLG40T65FUK-F , BLG40T65FUL-F , BLG40T65FUL-K , BLG40T65FUL-W , BLG50T65FDKA-F , BLG50T65FDLA-F , IRGP4086 , BLG50T65FDLA-W , BLG50T65FKA-F , BLG50T65FLA-F , BLG60T65FDK-F , BLG60T65FDK-K , BLG60T65FDK-W , BLG60T65FDL-F , BLG60T65FDL-K .
History: BLG40T120FUH-F | APTGF25X120E2 | GT80J101 | APTLGF210U120T | SGT20T60SD1T | MMG150S120B6TN
History: BLG40T120FUH-F | APTGF25X120E2 | GT80J101 | APTLGF210U120T | SGT20T60SD1T | MMG150S120B6TN



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