BLG50T65FDLA-K Datasheet. Specs and Replacement

Type Designator: BLG50T65FDLA-K  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 44 nS

Coesⓘ - Output Capacitance, typ: 158 pF

Package: TO-3PF

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BLG50T65FDLA-K datasheet

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 blg50t65fdla-f blg50t65fdla-k blg50t65fdla-w.pdf pdf_icon

BLG50T65FDLA-K

BLG50T65FDLA IGBT 1 Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒

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BLG50T65FDLA-K

BLG50T65FDKA IGBT 1 Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒

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 blg50t65fla-f.pdf pdf_icon

BLG50T65FDLA-K

BLG50T65FLA IGBT 1 Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6... See More ⇒

 5.2. Size:833K  belling
 blg50t65fka-f.pdf pdf_icon

BLG50T65FDLA-K

BLG50T65FKA IGBT 1 Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CE switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650... See More ⇒

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Specs: BLG40T65FDL-W, BLG40T65FUK-W, BLG40T65FUK-F, BLG40T65FUL-F, BLG40T65FUL-K, BLG40T65FUL-W, BLG50T65FDKA-F, BLG50T65FDLA-F, IRGP4063D, BLG50T65FDLA-W, BLG50T65FKA-F, BLG50T65FLA-F, BLG60T65FDK-F, BLG60T65FDK-K, BLG60T65FDK-W, BLG60T65FDL-F, BLG60T65FDL-K

Keywords - BLG50T65FDLA-K transistor spec

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