All IGBT. BLG50T65FDLA-K Datasheet

 

BLG50T65FDLA-K Datasheet and Replacement


   Type Designator: BLG50T65FDLA-K
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 50T65FDLA
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 158 pF
   Qg ⓘ - Total Gate Charge, typ: 106 nC
   Package: TO-3PF
 

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BLG50T65FDLA-K Datasheet (PDF)

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BLG50T65FDLA-K

BLG50T65FDLA IGBT 1Description Step-Down Converter BLG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

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BLG50T65FDLA-K

BLG50T65FDKA IGBT 1Description Step-Down Converter BLG50T65FDKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

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BLG50T65FDLA-K

BLG50T65FLA IGBT 1Description Step-Down Converter BLQG50T65FDLA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 5.2. Size:833K  belling
blg50t65fka-f.pdf pdf_icon

BLG50T65FDLA-K

BLG50T65FKA IGBT 1Description Step-Down Converter BLG50T65FKA is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V (sat) , optimized CEswitching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: BLG40T120FUH-F | APTLGF210U120T | BSM75GD120DN2

Keywords - BLG50T65FDLA-K transistor datasheet

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 BLG50T65FDLA-K equivalent finder
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 BLG50T65FDLA-K substitution
 BLG50T65FDLA-K replacement

 

 
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