BLG60T65FDL-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLG60T65FDL-F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 44 nS
Coesⓘ - Capacitancia de salida, typ: 121 pF
Paquete / Cubierta: TO-247
- Selección de transistores por parámetros
BLG60T65FDL-F Datasheet (PDF)
blg60t65fdl-f blg60t65fdl-k blg60t65fdl-w.pdf

BLG60T65FDL IGBT 1Description Step-Down Converter BLG60T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value
blg60t65fdk-f blg60t65fdk-k blg60t65fdk-w.pdf

BLG60T65FDK IGBT 1Description Step-Down Converter BLG60T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value
blg60t65ful-f blg60t65ful-k blg60t65ful-w.pdf

BLG60T65FUL IGBT 1Description Step-Down Converter BLG60T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: RJH60A83RDPE | BLG40T65FUL-W | IXGP30N60C3C1 | VS-GB50YF120N | SKM200GAL123DKLD110 | TGAN20N150FD
History: RJH60A83RDPE | BLG40T65FUL-W | IXGP30N60C3C1 | VS-GB50YF120N | SKM200GAL123DKLD110 | TGAN20N150FD



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
2sc1815 datasheet | mj15015 | 13003 transistor datasheet | 2n3416 | bdx53c | k3563 | d882p | 2sb1560