Справочник IGBT. BLG60T65FDL-F

 

BLG60T65FDL-F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: BLG60T65FDL-F
   Тип транзистора: IGBT + Diode
   Маркировка: G60T65FDL
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.2 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 44 nS
   Coesⓘ - Выходная емкость, типовая: 121 pF
   Qgⓘ - Общий заряд затвора, typ: 118 nC
   Тип корпуса: TO-247

 Аналог (замена) для BLG60T65FDL-F

 

 

BLG60T65FDL-F Datasheet (PDF)

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blg60t65fdl-f blg60t65fdl-k blg60t65fdl-w.pdf

BLG60T65FDL-F
BLG60T65FDL-F

BLG60T65FDL IGBT 1Description Step-Down Converter BLG60T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

 4.1. Size:1110K  belling
blg60t65fdk-f blg60t65fdk-k blg60t65fdk-w.pdf

BLG60T65FDL-F
BLG60T65FDL-F

BLG60T65FDK IGBT 1Description Step-Down Converter BLG60T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

 5.1. Size:1113K  belling
blg60t65ful-f blg60t65ful-k blg60t65ful-w.pdf

BLG60T65FDL-F
BLG60T65FDL-F

BLG60T65FUL IGBT 1Description Step-Down Converter BLG60T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value

Другие IGBT... BLG50T65FDLA-F , BLG50T65FDLA-K , BLG50T65FDLA-W , BLG50T65FKA-F , BLG50T65FLA-F , BLG60T65FDK-F , BLG60T65FDK-K , BLG60T65FDK-W , TGAN60N60F2DS , BLG60T65FDL-K , BLG60T65FDL-W , BLG60T65FUL-F , BLG60T65FUL-K , BLG60T65FUL-W , BLG75T65FDK-F , BLG75T65FDL-F , BLG75T65FUK-F .

 

 
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