BLG60T65FUL-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLG60T65FUL-F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 47 nS
Coesⓘ - Capacitancia de salida, typ: 121 pF
Paquete / Cubierta: TO-247
- Selección de transistores por parámetros
BLG60T65FUL-F Datasheet (PDF)
blg60t65ful-f blg60t65ful-k blg60t65ful-w.pdf

BLG60T65FUL IGBT 1Description Step-Down Converter BLG60T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value
blg60t65fdl-f blg60t65fdl-k blg60t65fdl-w.pdf

BLG60T65FDL IGBT 1Description Step-Down Converter BLG60T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value
blg60t65fdk-f blg60t65fdk-k blg60t65fdk-w.pdf

BLG60T65FDK IGBT 1Description Step-Down Converter BLG60T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized CE(sat) switching performance and low gate charge Q . gThe IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: F4-100R12KS4 | GT50J301 | SKM100GAL12T4 | APTGT100X120TE3 | APTGT100DA120D1 | FF100R12RT4 | FGA3060ADF
History: F4-100R12KS4 | GT50J301 | SKM100GAL12T4 | APTGT100X120TE3 | APTGT100DA120D1 | FF100R12RT4 | FGA3060ADF



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
2n3416 | bdx53c | k3563 | d882p | 2sb1560 | 2n1304 | 2sa979 | 2sc4793