BLG75T65FUK-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLG75T65FUK-F
Tipo de transistor: IGBT + Diode
Código de marcado: 75T65FUK
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 468 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.2 V
trⓘ - Tiempo de subida, typ: 66 nS
Coesⓘ - Capacitancia de salida, typ: 200 pF
Qgⓘ - Carga total de la puerta, typ: 145 nC
Paquete / Cubierta: TO-247
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BLG75T65FUK-F Datasheet (PDF)
blg75t65fuk-f.pdf
BLG75T65FUK IGBT 1Description Step-Down Converter BLG75T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un
blg75t65fdl-f.pdf
BLG75T65FDL IGBT 1Description Step-Down Converter BLG75T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un
blg75t65fdk-f.pdf
BLG75T65FDK IGBT 1Description Step-Down Converter BLG75T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un
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