BLG75T65FUK-F Todos los transistores

 

BLG75T65FUK-F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLG75T65FUK-F
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 468 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   trⓘ - Tiempo de subida, typ: 66 nS
   Coesⓘ - Capacitancia de salida, typ: 200 pF
   Paquete / Cubierta: TO-247
 

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BLG75T65FUK-F Datasheet (PDF)

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BLG75T65FUK-F

BLG75T65FUK IGBT 1Description Step-Down Converter BLG75T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un

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BLG75T65FUK-F

BLG75T65FDL IGBT 1Description Step-Down Converter BLG75T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un

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 blg75t65fdk-f.pdf pdf_icon

BLG75T65FUK-F

BLG75T65FDK IGBT 1Description Step-Down Converter BLG75T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is gsuitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un

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History: 2MBI300P-140 | FGH40T70SHD | CM150TU-12F | TIG056BF-1E | SKM50GAL12T4 | T0570VB25G

 

 
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