BLG75T65FUK-F Datasheet. Specs and Replacement

Type Designator: BLG75T65FUK-F  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 468 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 66 nS

Coesⓘ - Output Capacitance, typ: 200 pF

Package: TO-247

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BLG75T65FUK-F datasheet

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BLG75T65FUK-F

BLG75T65FUK IGBT 1 Description Step-Down Converter BLG75T65FUK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un... See More ⇒

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BLG75T65FUK-F

BLG75T65FDL IGBT 1 Description Step-Down Converter BLG75T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un... See More ⇒

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BLG75T65FUK-F

BLG75T65FDK IGBT 1 Description Step-Down Converter BLG75T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Un... See More ⇒

Specs: BLG60T65FDL-F, BLG60T65FDL-K, BLG60T65FDL-W, BLG60T65FUL-F, BLG60T65FUL-K, BLG60T65FUL-W, BLG75T65FDK-F, BLG75T65FDL-F, MBQ50T65FDSC, BLQG3040A-D, BLQG3040A-B, BLQG3040-D, BLQG3040-B, BLQG50T65FCKA-F, BLQG50T65FDLA-F, BLQG50T65FDLA-K, BLQG50T65FDLA-W

Keywords - BLG75T65FUK-F transistor spec

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