BLQG3040-B Todos los transistores

 

BLQG3040-B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLQG3040-B
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 370 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 10 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 21 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 2.2 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 2600 nS
   Coesⓘ - Capacitancia de salida, typ: 68 pF
   Qgⓘ - Carga total de la puerta, typ: 7.5 nC
   Paquete / Cubierta: TO-263
 

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BLQG3040-B Datasheet (PDF)

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BLQG3040-B

BLQG3040 IGBT 1Description BLQG3040 is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver. K

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BLQG3040-B

BLQG3040A IGBT 1Description BLQG3040A is obtained by advanced ignition Step-Down Converter IGBTs technology which reduce the conduction loss, , enhance the SCIS capability. Internally integrated diodes can provide the voltage clamping without the need for external components. The IGBT is suitable device for automotive ignition circuits, specifically as a coil driver.

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 1MBI2400U4D-170 | TGAN20S150FD

 

 
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History: 1MBI2400U4D-170 | TGAN20S150FD

BLQG3040-B   BLQG3040-B   BLQG3040-B  

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