MPBW50N65ES Todos los transistores

 

MPBW50N65ES - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPBW50N65ES
   Tipo de transistor: IGBT + Diode
   Código de marcado: MP50N65ES
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.54 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 72 nS
   Coesⓘ - Capacitancia de salida, typ: 172 pF
   Qgⓘ - Carga total de la puerta, typ: 130 nC
   Paquete / Cubierta: TO247

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MPBW50N65ES Datasheet (PDF)

 ..1. Size:1401K  cn marching-power
mpbw50n65es.pdf

MPBW50N65ES MPBW50N65ES

MPBW50N65ES650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW50N65ES MP50N65ES TO-247-

 4.1. Size:1003K  cn marching-power
mpbw50n65eh.pdf

MPBW50N65ES MPBW50N65ES

MPBW50N65EH650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeMPBW50N65EH MP50N65EH TO-247-31Maximum Rated ValuesParameter Sy

 4.2. Size:1012K  cn marching-power
ampbw50n65e.pdf

MPBW50N65ES MPBW50N65ES

AMPBW50N65E650V-50A Trench and Field Stop IGBTFeaturesApplications Automotive AEC-Q101 qualified UPS Easy parallel switching capability due to PFCpositive temperature coefficient in VCEsat PTC Heater Low VCEsatfast switching Climate Compressor High ruggedness, good thermal stability Very tight parameter distributionType Marking Package

 4.3. Size:1168K  cn marching-power
mpbw50n65ed.pdf

MPBW50N65ES MPBW50N65ES

MPBW50N65ED650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW50N65ED MP50N65ED TO-247-

 4.4. Size:1140K  cn marching-power
mpbw50n65e.pdf

MPBW50N65ES MPBW50N65ES

MPBW50N65E650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW50N65E MP50N65E TO-247-3

Otros transistores... MPBW40N120BF , MPBW40N120EH , MPBW40N120ES , MPBW40N65BU , MPBW40N65E , MPBW50N65E , MPBW50N65ED , MPBW50N65EH , YGW75N65F1 , MPBW75N65E , MPGC50N65E , MPGW40N65E , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB .

 

 
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