DAHF200G120SB Todos los transistores

 

DAHF200G120SB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DAHF200G120SB
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 240 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 900 pF
   Paquete / Cubierta: MODULE

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DAHF200G120SB Datasheet (PDF)

 ..1. Size:558K  dacosemi
dahf200g120sb.pdf

DAHF200G120SB
DAHF200G120SB

DAHF200G120SBDACO SEMICONDUCTOR CO., LTD.IGBT Power Module1200V / 200APreliminaryHDA-10662A-10662Features 62mm Fast Switching / Trench Field Stop IGBT Technology Low Switching Losses Super Fast Diodes High Short Circuit CapabilityApplications Welder / Power SupplyCircuit Diagram Headline UPS / Inverter6 Industrial Motor Drive71 2 35M

 9.1. Size:550K  dacosemi
dahf225g120sb.pdf

DAHF200G120SB
DAHF200G120SB

DAHF225G120SBDACO SEMICONDUCTOR CO., LTD.IGBT Power Module1200V / 225APreliminaryHDA-10662-10662Features 62mm Fast Switching / Trench Field Stop IGBT Technology Low Switching Losses Super Fast Diodes High Short Circuit CapabilityApplications Welder / Power SupplyCircuit Diagram Headline UPS / Inverter6 Industrial Motor Drive71 2 35Ma

Otros transistores... MPBW75N65E , MPGC50N65E , MPGW40N65E , DAG075F065P1 , DAHF075G120SA , DAHF100G120SA , DAHF150G120SA , DAHF150G120SB , RJP63K2DPP-M0 , DAHF225G120SB , DAHF300G120SB , DAZF075G120SCA , DAZF075G120XCA , DAZF100G120SCA , DAZF100G120XCA , DAZF100G170XCA , DAZF150G120SCA .

 

 
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DAHF200G120SB
  DAHF200G120SB
  DAHF200G120SB
 

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