AOB15B65MQ1 Todos los transistores

 

AOB15B65MQ1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB15B65MQ1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 214 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 18 nS

Coesⓘ - Capacitancia de salida, typ: 72 pF

Encapsulados: TO263

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AOB15B65MQ1 datasheet

 ..1. Size:654K  aosemi
aob15b65mq1.pdf pdf_icon

AOB15B65MQ1

AOT15B65MQ1/AOB15B65MQ1 TM 650V, 15A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables hig

 5.1. Size:556K  aosemi
aot15b65m1 aob15b65m1.pdf pdf_icon

AOB15B65MQ1

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 5.2. Size:1166K  aosemi
aob15b65m1.pdf pdf_icon

AOB15B65MQ1

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 7.1. Size:675K  aosemi
aob15b60d.pdf pdf_icon

AOB15B65MQ1

AOB15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to

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