AOB15B65MQ1 PDF and Equivalents Search

 

AOB15B65MQ1 Specs and Replacement

Type Designator: AOB15B65MQ1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 214 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Coesⓘ - Output Capacitance, typ: 72 pF

Package: TO263

 AOB15B65MQ1 Substitution

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AOB15B65MQ1 datasheet

 ..1. Size:654K  aosemi
aob15b65mq1.pdf pdf_icon

AOB15B65MQ1

AOT15B65MQ1/AOB15B65MQ1 TM 650V, 15A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables hig... See More ⇒

 5.1. Size:556K  aosemi
aot15b65m1 aob15b65m1.pdf pdf_icon

AOB15B65MQ1

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff... See More ⇒

 5.2. Size:1166K  aosemi
aob15b65m1.pdf pdf_icon

AOB15B65MQ1

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff... See More ⇒

 7.1. Size:675K  aosemi
aob15b60d.pdf pdf_icon

AOB15B65MQ1

AOB15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to... See More ⇒

Specs: DAZF075G120SCA , DAZF075G120XCA , DAZF100G120SCA , DAZF100G120XCA , DAZF100G170XCA , DAZF150G120SCA , DAZF150G120XCA , AOB10B65M1 , RJP30H2A , AOB20B65M1 , AOB30B65LN2V , AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 .

History: MPBW50N65EH | MPBW50N65E

Keywords - AOB15B65MQ1 transistor spec

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