AOD5B65M1E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD5B65M1E Datasheet (PDF)

..1. Size:1255K aosemi
aod5b65m1e.pdf pdf_icon

AOD5B65M1ETM650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllabilityIC (TC=100C) 5A Low VCE(sat) for low conduction lossesVCE(sat) (TJ=25C) 2.15V Soft switching performance and low EMI High electrostatic perfor

5.1. Size:765K aosemi
aod5b65m1.pdf pdf_icon

AOD5B65M1TM 650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

5.2. Size:1088K aosemi
aod5b65m1h.pdf pdf_icon

AOD5B65M1HTM650V, 5A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

6.1. Size:773K aosemi
aod5b65mq1e.pdf pdf_icon

AOD5B65MQ1ETM 650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 5AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 2.15VC) diode Very good EMI performance with lower turn-on switching losses

Otros transistores... DAZF150G120SCA , DAZF150G120XCA , AOB10B65M1 , AOB15B65MQ1 , AOB20B65M1 , AOB30B65LN2V , AOB5B65M1 , AOBS30B65LN , FGA25N120ANTD , AOD5B65M1H , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , AOD7B65M3 , AOD8B65MQ1 , AOGF40B65H2AL .