AOD5B65M1H Todos los transistores

 

AOD5B65M1H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOD5B65M1H
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 83 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.57 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 13 nS
   Coesⓘ - Capacitancia de salida, typ: 36 pF
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

AOD5B65M1H Datasheet (PDF)

 ..1. Size:1088K  aosemi
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AOD5B65M1H

AOD5B65M1HTM650V, 5A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 5.1. Size:1255K  aosemi
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AOD5B65M1H

AOD5B65M1ETM650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllabilityIC (TC=100C) 5A Low VCE(sat) for low conduction lossesVCE(sat) (TJ=25C) 2.15V Soft switching performance and low EMI High electrostatic perfor

 5.2. Size:765K  aosemi
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AOD5B65M1H

AOD5B65M1TM 650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 6.1. Size:773K  aosemi
aod5b65mq1e.pdf pdf_icon

AOD5B65M1H

AOD5B65MQ1ETM 650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 5AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 2.15VC) diode Very good EMI performance with lower turn-on switching losses

Otros transistores... DAZF150G120XCA , AOB10B65M1 , AOB15B65MQ1 , AOB20B65M1 , AOB30B65LN2V , AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , FGA25N120ANTD , AOD5B65MQ1E , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , AOD7B65M3 , AOD8B65MQ1 , AOGF40B65H2AL , AOGF60B65H2AL .

History: SKM200GA123D | STGE50NC60WD | DL2G75SH6A | MMG400Q060B6EN | IXBN75N170A | 2MBI200TA-060

 

 
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