AOD5B65MQ1E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOD5B65MQ1E
Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 52 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 13 nS
Coesⓘ - Capacitancia de salida, typ: 22 pF
Qgⓘ - Carga total de la puerta, typ: 8.8 nC
Paquete / Cubierta: TO252
Búsqueda de reemplazo de AOD5B65MQ1E - IGBT
AOD5B65MQ1E Datasheet (PDF)
aod5b65mq1e.pdf
AOD5B65MQ1ETM 650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 5AC) IGBT copacked with very fast and soft antiparallelVCE(sat) (TJ=25 2.15VC) diode Very good EMI performance with lower turn-on switching losses
aod5b65m1e.pdf
AOD5B65M1ETM650V, 5A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllabilityIC (TC=100C) 5A Low VCE(sat) for low conduction lossesVCE(sat) (TJ=25C) 2.15V Soft switching performance and low EMI High electrostatic perfor
aod5b65m1.pdf
AOD5B65M1TM 650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aod5b65m1h.pdf
AOD5B65M1HTM650V, 5A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
Otros transistores... AOB10B65M1 , AOB15B65MQ1 , AOB20B65M1 , AOB30B65LN2V , AOB5B65M1 , AOBS30B65LN , AOD5B65M1E , AOD5B65M1H , RJP63F3DPP-M0 , AOD5B65N1 , AOD6B60M1 , AOD6B65MQ1E , AOD7B65M3 , AOD8B65MQ1 , AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2