AOD5B65MQ1E PDF and Equivalents Search

 

AOD5B65MQ1E Specs and Replacement

Type Designator: AOD5B65MQ1E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 52 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 22 pF

Package: TO252

 AOD5B65MQ1E Substitution

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AOD5B65MQ1E datasheet

 ..1. Size:773K  aosemi
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AOD5B65MQ1E

AOD5B65MQ1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 5A C) IGBT copacked with very fast and soft antiparallel VCE(sat) (TJ=25 2.15V C) diode Very good EMI performance with lower turn-on switching losses ... See More ⇒

 6.1. Size:1255K  aosemi
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AOD5B65MQ1E

AOD5B65M1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllability IC (TC=100 C) 5A Low VCE(sat) for low conduction losses VCE(sat) (TJ=25 C) 2.15V Soft switching performance and low EMI High electrostatic perfor... See More ⇒

 6.2. Size:765K  aosemi
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AOD5B65MQ1E

AOD5B65M1 TM 650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies... See More ⇒

 6.3. Size:1088K  aosemi
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AOD5B65MQ1E

AOD5B65M1H TM 650V, 5A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies ... See More ⇒

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Specs: AOB10B65M1, AOB15B65MQ1, AOB20B65M1, AOB30B65LN2V, AOB5B65M1, AOBS30B65LN, AOD5B65M1E, AOD5B65M1H, RJP30H1DPD, AOD5B65N1, AOD6B60M1, AOD6B65MQ1E, AOD7B65M3, AOD8B65MQ1, AOGF40B65H2AL, AOGF60B65H2AL, AOK20B120D1

Keywords - AOD5B65MQ1E transistor spec

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