IXGT20N60BD1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGT20N60BD1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 150 pF
Paquete / Cubierta: TO268
Búsqueda de reemplazo de IXGT20N60BD1 IGBT
Principales características: IXGT20N60BD1
ixgt20n60bd1.pdf
IXGH 20N60BD1 HiPerFASTTM IGBT VCES = 600 V IXGT 20N60BD1 with Diode IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V E C (TAB) VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C20 A
ixgt20n60b.pdf
VCES = 600 V IXGH 20N60B HiPerFASTTM IGBT IC25 = 40 A IXGT 20N60B VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 (D3) (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC90 TC = 90 C20 A ICM T
ixgt20n120b.pdf
IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM
ixgh20n120b ixgt20n120b.pdf
IXGH 20N120B VCES = 1200 V High Voltage IGBT IXGT 20N120B IC25 = 40 A VCE(sat) = 3.4 V Preliminary Data Sheet tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C40 A TO-247 AD (IXGH) IC110 TC = 110 C20 A ICM
Otros transistores... IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 , IXGT20N100 , IXGT20N60B , SGT50T65FD1PT , IXGT24N60C , IXGT24N60CD1 , IXGT28N30 , IXGT28N30A , IXGT28N30B , IXGT28N60B , IXGT28N60D1 , IXGT28N90B .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc1678 | irf4115 | 2sc828 replacement | 2sd669 datasheet | c102 transistor | bt152 datasheet | 2sa1302 datasheet | mpsa13 transistor equivalent










