AOK20B135E1 Todos los transistores

 

AOK20B135E1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOK20B135E1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

Coesⓘ - Capacitancia de salida, typ: 86 pF

Encapsulados: TO247

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AOK20B135E1 datasheet

 ..1. Size:1683K  aosemi
aok20b135e1.pdf pdf_icon

AOK20B135E1

AOK20B135E1 TM Alpha IGBT with Diode 1350V, 20A General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.8V Better thermal management Hig

 5.1. Size:713K  aosemi
aok20b135d1.pdf pdf_icon

AOK20B135E1

AOK20B135D1 TM 1350V, 20A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.57V Better thermal management

 7.1. Size:1321K  aosemi
aok20b120e1.pdf pdf_icon

AOK20B135E1

AOK20B120E1 TM Alpha IGBT with Diode 1200V, 20A General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1200V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.68V Better thermal management Hi

 7.2. Size:810K  aosemi
aok20b120e2.pdf pdf_icon

AOK20B135E1

AOK20B120E2 TM 1200V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary Latest Alpha IGBT ( IGBT) technology VCE 1200V Best in Class VCE(sat) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time VCE(sat) (TC=25 C) 1.75V Very smooth turn-off current waveforms reduce EM

Otros transistores... AOD7B65M3 , AOD8B65MQ1 , AOGF40B65H2AL , AOGF60B65H2AL , AOK20B120D1 , AOK20B120E1 , AOK20B120E2 , AOK20B135D1 , IRGP4063D , AOK20B65M1 , AOK20B65M2 , AOK30B120D2 , AOK30B135C1 , AOK30B135W1 , AOK30B65M2 , AOK40B120H1 , AOK40B120M1 .

 

 

 


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