AOK30B65M2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK30B65M2
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 42 nS
Coesⓘ - Capacitancia de salida, typ: 221 pF
Qgⓘ - Carga total de la puerta, typ: 63 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de AOK30B65M2 - IGBT
AOK30B65M2 Datasheet (PDF)
aok30b65m2.pdf
AOK30B65M2TM650V, 30A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 30A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.66V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok30b60d1.pdf
AOK30B60D1TM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aok30b60d.pdf
AOK30B60DTM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to
aok30b135w1.pdf
AOK30B135W1TM1350V, 30A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 30A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.8V Better thermal management Hi
aok30b120d2.pdf
AOK30B120D2 TM1200V, 30A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1200V Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI IC (TC=100 30AC) Better thermal management VCE(sat) (TC=25 1.77VC) High surge current capability Minimal gate spi
aok30b135c1.pdf
AOK30B135C1TM 1350V, 30A Alpha RC-IGBTwith Monolithic Body Diode General Description Product Summary Latest AlphaRC-IGBT (RC-IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 30AC) Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 1.92VC)
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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