AOK30B65M2 - аналоги, основные параметры, даташиты
Наименование: AOK30B65M2
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.66 V @25℃
tr ⓘ - Время нарастания типовое: 42 nS
Coesⓘ - Выходная емкость, типовая: 221 pF
Тип корпуса: TO247
Аналог (замена) для AOK30B65M2
- подбор ⓘ IGBT транзистора по параметрам
AOK30B65M2 даташит
aok30b65m2.pdf
AOK30B65M2 TM 650V, 30A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 30A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.66V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok30b60d1.pdf
AOK30B60D1 TM 600V, 30A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 30A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance
aok30b60d.pdf
AOK30B60D TM 600V, 30A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 30A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to
aok30b135w1.pdf
AOK30B135W1 TM 1350V, 30A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 30A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.8V Better thermal management Hi
Другие IGBT... AOK20B120E2 , AOK20B135D1 , AOK20B135E1 , AOK20B65M1 , AOK20B65M2 , AOK30B120D2 , AOK30B135C1 , AOK30B135W1 , IHW20N135R5 , AOK40B120H1 , AOK40B120M1 , AOK40B120N1 , AOK40B120P1 , AOK40B60D1 , AOK40B65H1 , AOK40B65HQ1 , AOK40B65HQ2 .
History: AOK40B120H1
History: AOK40B120H1
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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