AOK30B65M2 Даташит. Аналоги. Параметры и характеристики.
Наименование: AOK30B65M2
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.66 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 42 nS
Coesⓘ - Выходная емкость, типовая: 221 pF
Qg ⓘ - Общий заряд затвора, typ: 63 nC
Тип корпуса: TO247
Аналог (замена) для AOK30B65M2
AOK30B65M2 Datasheet (PDF)
aok30b65m2.pdf

AOK30B65M2TM650V, 30A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 30A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.66V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok30b60d1.pdf

AOK30B60D1TM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aok30b60d.pdf

AOK30B60DTM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to
aok30b135w1.pdf

AOK30B135W1TM1350V, 30A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 30A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.8V Better thermal management Hi
Другие IGBT... AOK20B120E2 , AOK20B135D1 , AOK20B135E1 , AOK20B65M1 , AOK20B65M2 , AOK30B120D2 , AOK30B135C1 , AOK30B135W1 , CRG60T60AN3H , AOK40B120H1 , AOK40B120M1 , AOK40B120N1 , AOK40B120P1 , AOK40B60D1 , AOK40B65H1 , AOK40B65HQ1 , AOK40B65HQ2 .
History: IXXH30N65B4 | IXGH48N60A3 | AOK30B60D1 | CM1800HC-34N | NCE07TD60BF | APT150GN60JDQ4 | FGD3040G2-F085
History: IXXH30N65B4 | IXGH48N60A3 | AOK30B60D1 | CM1800HC-34N | NCE07TD60BF | APT150GN60JDQ4 | FGD3040G2-F085



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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