AOK40B65M3 Todos los transistores

 ..1. Size:997K  aosemi
 aok40b65m3.pdf

AOK40B65M3 TM 650V,40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencie

 6.1. Size:535K  1
 aok40b65h2al.pdf

AOK40B65H2AL TM 650V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

 6.2. Size:1032K  aosemi
 aok40b65h2al.pdf

AOK40B65H2AL TM 650 V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 40A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.05V C) High efficient turn-on di/dt controllability Very high switching speed Lo

 6.3. Size:569K  aosemi
 aok40b65hq1.pdf

AOK40B65HQ1 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications U

 6.4. Size:564K  aosemi
 aok40b65hq2.pdf

AOK40B65HQ2 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications D

 6.5. Size:565K  aosemi
 aok40b65hq3.pdf

AOK40B65HQ3 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 40A C) Low Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC application fo

 6.6. Size:995K  aosemi
 aok40b65h1.pdf

AOK40B65H1 TM 650V,40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur