AOK50B65M2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK50B65M2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.72 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 68 nS
Coesⓘ - Capacitancia de salida, typ: 368 pF
Paquete / Cubierta: TO247
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AOK50B65M2 Datasheet (PDF)
aok50b65m2.pdf
AOK50B65M2TM650V, 50A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 50A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.72V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok50b65h1.pdf
AOK50B65H1TM650V, 50A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 50AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.9VC) High efficient turn-on di/dt controllability Very high switching speed Low
aok50b60d1.pdf
AOK50B60D1TM600V, 50A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 50Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
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