AOK50B65M2 PDF and Equivalents Search

 

AOK50B65M2 Specs and Replacement

Type Designator: AOK50B65M2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.72 V @25℃

tr ⓘ - Rise Time, typ: 68 nS

Coesⓘ - Output Capacitance, typ: 368 pF

Package: TO247

 AOK50B65M2 Substitution

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AOK50B65M2 datasheet

 ..1. Size:1338K  aosemi
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AOK50B65M2

AOK50B65M2 TM 650V, 50A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 50A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.72V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies ... See More ⇒

 6.1. Size:583K  aosemi
aok50b65h1.pdf pdf_icon

AOK50B65M2

AOK50B65H1 TM 650V, 50A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 50A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.9V C) High efficient turn-on di/dt controllability Very high switching speed Low... See More ⇒

 7.1. Size:710K  aosemi
aok50b60d1.pdf pdf_icon

AOK50B65M2

AOK50B60D1 TM 600V, 50A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 50A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒

 9.1. Size:1302K  aosemi
aok500v120x2.pdf pdf_icon

AOK50B65M2

ALPHA & OMEGA AOK500V120X2 SEMICONDUCTOR 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary VDS @ TJ, max 1200 V Proprietary SiC MOSFET technology IDM 10 A Low loss, with low RDS,ON RDS(ON), typ 500 m Fast switching with low RG and low capacitance Optimized gate drive voltage (VGS = 15 V) Q 50 nC rr Low reverse recovery diode (Qrr) E @... See More ⇒

Specs: AOK40B120P1, AOK40B60D1, AOK40B65H1, AOK40B65HQ1, AOK40B65HQ2, AOK40B65HQ3, AOK40B65M3, AOK50B65H1, JT075N065WED, AOK60B65H1, AOK60B65H2AL, AOK60B65HQ3, AOK60B65M3, AOK75B60D1, AOK75B65H1, AOK75B65H1V, AOKS30B60D1

Keywords - AOK50B65M2 transistor spec

 AOK50B65M2 cross reference
 AOK50B65M2 equivalent finder
 AOK50B65M2 lookup
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