AOK60B65M3 Todos los transistores

 

AOK60B65M3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOK60B65M3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 500 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.94 V @25℃

trⓘ - Tiempo de subida, typ: 84 nS

Coesⓘ - Capacitancia de salida, typ: 330 pF

Encapsulados: TO247

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AOK60B65M3 datasheet

 ..1. Size:1294K  aosemi
aok60b65m3.pdf pdf_icon

AOK60B65M3

AOK60B65M3 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.94V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficienci

 6.1. Size:590K  aosemi
aok60b65h1.pdf pdf_icon

AOK60B65M3

AOK60B65H1 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 60A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.88V C) High efficient turn-on di/dt controllability Very high switching speed Lo

 6.2. Size:602K  aosemi
aok60b65hq3.pdf pdf_icon

AOK60B65M3

AOK60B65HQ3 TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 C) 60A Very low Vf and Qrr VCE(sat) (TJ=25 C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC applic

 6.3. Size:1105K  aosemi
aok60b65h2al.pdf pdf_icon

AOK60B65M3

AOK60B65H2AL TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 650V 650V Breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn

Otros transistores... AOK40B65HQ2 , AOK40B65HQ3 , AOK40B65M3 , AOK50B65H1 , AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , IRGP4066D , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 .

History: SGP6N60UF | AOKS40B60D1 | MPBQ120N65GSF | AOK75B65H1

 

 

 

 

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