AOK60B65M3 PDF and Equivalents Search

 

AOK60B65M3 Specs and Replacement

Type Designator: AOK60B65M3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.94 V @25℃

tr ⓘ - Rise Time, typ: 84 nS

Coesⓘ - Output Capacitance, typ: 330 pF

Package: TO247

 AOK60B65M3 Substitution

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AOK60B65M3 datasheet

 ..1. Size:1294K  aosemi
aok60b65m3.pdf pdf_icon

AOK60B65M3

AOK60B65M3 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.94V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficienci... See More ⇒

 6.1. Size:590K  aosemi
aok60b65h1.pdf pdf_icon

AOK60B65M3

AOK60B65H1 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 60A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.88V C) High efficient turn-on di/dt controllability Very high switching speed Lo... See More ⇒

 6.2. Size:602K  aosemi
aok60b65hq3.pdf pdf_icon

AOK60B65M3

AOK60B65HQ3 TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 C) 60A Very low Vf and Qrr VCE(sat) (TJ=25 C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC applic... See More ⇒

 6.3. Size:1105K  aosemi
aok60b65h2al.pdf pdf_icon

AOK60B65M3

AOK60B65H2AL TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 650V 650V Breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn... See More ⇒

Specs: AOK40B65HQ2 , AOK40B65HQ3 , AOK40B65M3 , AOK50B65H1 , AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , IRGP4066D , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 .

History: DL2G75SH6N

Keywords - AOK60B65M3 transistor spec

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