All IGBT. AOK60B65M3 Datasheet

 

AOK60B65M3 Datasheet and Replacement


   Type Designator: AOK60B65M3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.94 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 84 nS
   Coesⓘ - Output Capacitance, typ: 330 pF
   Qg ⓘ - Total Gate Charge, typ: 106 nC
   Package: TO247
 

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AOK60B65M3 Datasheet (PDF)

 ..1. Size:1294K  aosemi
 aok60b65m3.pdf pdf_icon

AOK60B65M3

AOK60B65M3TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.94V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficienci

 6.1. Size:590K  aosemi
 aok60b65h1.pdf pdf_icon

AOK60B65M3

AOK60B65H1TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 60AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.88VC) High efficient turn-on di/dt controllability Very high switching speed Lo

 6.2. Size:602K  aosemi
 aok60b65hq3.pdf pdf_icon

AOK60B65M3

AOK60B65HQ3TM 650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100C) 60A Very low Vf and QrrVCE(sat) (TJ=25C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC applic

 6.3. Size:1105K  aosemi
 aok60b65h2al.pdf pdf_icon

AOK60B65M3

AOK60B65H2ALTM650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown voltageIC (TC=100C) 60A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn

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Datasheet: AOK40B65HQ2 , AOK40B65HQ3 , AOK40B65M3 , AOK50B65H1 , AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , JT075N065WED , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 .

Keywords - AOK60B65M3 transistor datasheet

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