AOK75B65H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK75B65H1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 556 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 95 nS
Coesⓘ - Capacitancia de salida, typ: 298 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de AOK75B65H1 - IGBT
AOK75B65H1 Datasheet (PDF)
aok75b65h1.pdf
AOK75B65H1TM650V, 75A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 75AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.85VC) High efficient turn-on di/dt controllability Very high switching speed Lo
aok75b65h1v.pdf
AOK75B65H1VTM650V, 75A Alpha IGBTAEC-Q101 QualifiedGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 75AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.85VC) High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and
aok75b60d1.pdf
AOK75B60D1TM 600V,75A Alpha IGBT with DiodeGeneral Description Product Summary AlphaIGBT ( IGBT) technology VCE600V Low VCE(SAT) enables high efficiencies IC (TC=100C) 75A Smooth Switching waveforms reduce EMI Better thermal management VCE(sat) (TJ=25C) 1.72V Minimal gate spike under high dV/dtApplications Welding Machines Solar Inverter
Otros transistores... AOK40B65M3 , AOK50B65H1 , AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 , TGAN20N135FD , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , AOT10B65M1 , AOT10B65M2 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2