All IGBT. AOK75B65H1 Datasheet

 

AOK75B65H1 Datasheet and Replacement


   Type Designator: AOK75B65H1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 556 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 95 nS
   Coesⓘ - Output Capacitance, typ: 298 pF
   Package: TO247
      - IGBT Cross-Reference

 

AOK75B65H1 Datasheet (PDF)

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AOK75B65H1

AOK75B65H1TM650V, 75A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 75AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.85VC) High efficient turn-on di/dt controllability Very high switching speed Lo

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AOK75B65H1

AOK75B65H1VTM650V, 75A Alpha IGBTAEC-Q101 QualifiedGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 75AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.85VC) High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and

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AOK75B65H1

AOK75B60D1TM 600V,75A Alpha IGBT with DiodeGeneral Description Product Summary AlphaIGBT ( IGBT) technology VCE600V Low VCE(SAT) enables high efficiencies IC (TC=100C) 75A Smooth Switching waveforms reduce EMI Better thermal management VCE(sat) (TJ=25C) 1.72V Minimal gate spike under high dV/dtApplications Welding Machines Solar Inverter

Datasheet: AOK40B65M3 , AOK50B65H1 , AOK50B65M2 , AOK60B65H1 , AOK60B65H2AL , AOK60B65HQ3 , AOK60B65M3 , AOK75B60D1 , CRG40T60AK3HD , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , AOT10B65M1 , AOT10B65M2 .

History: IXXH100N60B3

Keywords - AOK75B65H1 transistor datasheet

 AOK75B65H1 cross reference
 AOK75B65H1 equivalent finder
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