AOT10B60M1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOT10B60M1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 83 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.1 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 14 nS
Coesⓘ - Capacitancia de salida, typ: 36 pF
Qgⓘ - Carga total de la puerta, typ: 14 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AOT10B60M1 - IGBT
AOT10B60M1 Datasheet (PDF)
aot10b60m1.pdf
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aot10b60d.pdf
AOT10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t
aot10b65m2.pdf
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aot10b65m1.pdf
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aot10b65mq2.pdf
AOT10B65MQ2TM 650V, 10A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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