AOT10B60M1 Specs and Replacement
Type Designator: AOT10B60M1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 83 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
tr ⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 36 pF
Package: TO220
AOT10B60M1 Substitution - IGBT ⓘ Cross-Reference Search
AOT10B60M1 datasheet
aot10b60m1.pdf
AOT10B60M1 TM 600V,10A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 600V 600V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.3V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie... See More ⇒
aot10b60d.pdf
AOT10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t... See More ⇒
aot10b65m2.pdf
AOT10B65M2 TM 650V, 10A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 10A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.6V High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies ... See More ⇒
aot10b65m1.pdf
AOT10B65M1/AOB10B65M1 TM 650V, 10A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(SAT) enables high... See More ⇒
Specs: AOK60B65M3 , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , GT30F133 , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D , AOT15B65M3 , AOT15B65MQ1 , AOT20B65M1 , AOT5B60D .
History: AOT10B65M1
Keywords - AOT10B60M1 transistor spec
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History: AOT10B65M1
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