All IGBT. AOT10B60M1 Datasheet

 

AOT10B60M1 Datasheet and Replacement


   Type Designator: AOT10B60M1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Package: TO220
      - IGBT Cross-Reference

 

AOT10B60M1 Datasheet (PDF)

 ..1. Size:582K  aosemi
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AOT10B60M1

AOT10B60M1TM 600V,10A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 600V 600V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.3VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 6.1. Size:654K  aosemi
aot10b60d.pdf pdf_icon

AOT10B60M1

AOT10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

 7.1. Size:1525K  aosemi
aot10b65m2.pdf pdf_icon

AOT10B60M1

AOT10B65M2TM650V, 10A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 10A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.6V High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

 7.2. Size:1183K  aosemi
aot10b65m1.pdf pdf_icon

AOT10B60M1

AOT10B65M1/AOB10B65M1TM650V, 10A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(SAT) enables high

Datasheet: AOK60B65M3 , AOK75B60D1 , AOK75B65H1 , AOK75B65H1V , AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , STGB10NB37LZ , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , AOT15B60D , AOT15B65M3 , AOT15B65MQ1 , AOT20B65M1 , AOT5B60D .

History: MIO1200-33E10 | IXST35N120B | STGD10NC60S | MSG100D350FHS | NGTG25N120FL2WG | MSG20T65HPT1 | MSG40T120FQC

Keywords - AOT10B60M1 transistor datasheet

 AOT10B60M1 cross reference
 AOT10B60M1 equivalent finder
 AOT10B60M1 lookup
 AOT10B60M1 substitution
 AOT10B60M1 replacement

 

 
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