AOT15B60D Todos los transistores

 

AOT15B60D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT15B60D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 167 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 19 nS
   Coesⓘ - Capacitancia de salida, typ: 97 pF
   Qgⓘ - Carga total de la puerta, typ: 25.4 nC
   Paquete / Cubierta: TO220
 

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AOT15B60D Datasheet (PDF)

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 aot15b60d.pdf pdf_icon

AOT15B60D

AOT15B60DTM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to

 7.1. Size:556K  aosemi
 aot15b65m1 aob15b65m1.pdf pdf_icon

AOT15B60D

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 7.2. Size:654K  aosemi
 aot15b65mq1.pdf pdf_icon

AOT15B60D

AOT15B65MQ1/AOB15B65MQ1TM 650V, 15A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables hig

 7.3. Size:1328K  aosemi
 aot15b65m1.pdf pdf_icon

AOT15B60D

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

MOSTRAR MÁS

Otros transistores... AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , FGH75T65UPD , AOT15B65M3 , AOT15B65MQ1 , AOT20B65M1 , AOT5B60D , AOT5B65M1 , AOT8B65M3 , AOTF10B60D2 , AOTF10B65M1 .

History: FGA6530WDF | MG150HF12MRC2 | SIF30N65G21F | SKM195GAL062D | IXGB75N60BD1 | VS-GB75YF120N | IXXH80N65B4

 

 
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