Справочник IGBT. AOT15B60D

 

AOT15B60D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AOT15B60D
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.6 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 19 nS
   Coesⓘ - Выходная емкость, типовая: 97 pF
   Qgⓘ - Общий заряд затвора, typ: 25.4 nC
   Тип корпуса: TO220

 Аналог (замена) для AOT15B60D

 

 

AOT15B60D Datasheet (PDF)

 ..1. Size:671K  aosemi
 aot15b60d.pdf

AOT15B60D AOT15B60D

AOT15B60DTM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to

 7.1. Size:556K  aosemi
 aot15b65m1 aob15b65m1.pdf

AOT15B60D AOT15B60D

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 7.2. Size:654K  aosemi
 aot15b65mq1.pdf

AOT15B60D AOT15B60D

AOT15B65MQ1/AOB15B65MQ1TM 650V, 15A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables hig

 7.3. Size:1328K  aosemi
 aot15b65m1.pdf

AOT15B60D AOT15B60D

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 7.4. Size:553K  aosemi
 aot15b65m3.pdf

AOT15B60D AOT15B60D

AOT15B65M3TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.95VC) High efficient Turn-On di/dt controllability Low VCE(sat) enables high efficienci

Другие IGBT... AOKS30B60D1 , AOKS40B60D1 , AOKS40B65H1 , AOKS40B65H2AL , AOT10B60M1 , AOT10B65M1 , AOT10B65M2 , AOT10B65MQ2 , MBQ50T65FESC , AOT15B65M3 , AOT15B65MQ1 , AOT20B65M1 , AOT5B60D , AOT5B65M1 , AOT8B65M3 , AOTF10B60D2 , AOTF10B65M1 .

 

 
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