AOTF10B65M2
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOTF10B65M2
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 30
W
|Vce|ⓘ - Tensión máxima colector-emisor: 650
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.6
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 5.1
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 16
nS
Coesⓘ - Capacitancia de salida, typ: 82
pF
Qgⓘ - Carga total de la puerta, typ: 24
nC
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de AOTF10B65M2
- IGBT
AOTF10B65M2
Datasheet (PDF)
..1. Size:1182K aosemi
aotf10b65m2.pdf 
AOTF10B65M2TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies
4.1. Size:1325K aosemi
aotf10b65m1.pdf
AOTF10B65M1TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie
4.2. Size:581K aosemi
aotf10b65mq2.pdf
AOTF10B65MQ2TM 650V, 10A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc
6.1. Size:721K aosemi
aotf10b60d2.pdf
AOTF10B60D2TM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
6.2. Size:728K aosemi
aotf10b60d.pdf
AOTF10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
Otros transistores... AOT15B65M3
, AOT15B65MQ1
, AOT20B65M1
, AOT5B60D
, AOT5B65M1
, AOT8B65M3
, AOTF10B60D2
, AOTF10B65M1
, MGD623S
, AOTF10B65MQ2
, AOTF15B60D2
, AOTF15B65M2
, AOTF15B65M3
, AOTF15B65MQ1
, AOTF20B65LN2
, AOTF20B65M1
, AOTF20B65M2
.
