All IGBT. AOTF10B65M2 Datasheet

 

AOTF10B65M2 Datasheet and Replacement


   Type Designator: AOTF10B65M2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 82 pF
   Package: TO220F
 

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AOTF10B65M2 Datasheet (PDF)

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 aotf10b65m2.pdf pdf_icon

AOTF10B65M2

AOTF10B65M2TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

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AOTF10B65M2

AOTF10B65M1TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 4.2. Size:581K  aosemi
 aotf10b65mq2.pdf pdf_icon

AOTF10B65M2

AOTF10B65MQ2TM 650V, 10A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc

 6.1. Size:721K  aosemi
 aotf10b60d2.pdf pdf_icon

AOTF10B65M2

AOTF10B60D2TM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

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Datasheet: BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P , BLG20T65FDLA-F , BLG20T65FDLA-B , GT30J127 , BLG20T65FULA-A , BLG3040-D , BLG3040-B , BLG3040-P , BLG3040-I , BLG40T120FDH-F , BLG40T120FUH-F , BLG40T120FUK-F .

History: VS-GT400TH120U | NGTB30N120LWG

Keywords - AOTF10B65M2 transistor datasheet

 AOTF10B65M2 cross reference
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