AOTF20B65M2 Todos los transistores

 

AOTF20B65M2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF20B65M2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 45 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 32 nS
   Coesⓘ - Capacitancia de salida, typ: 156 pF
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

AOTF20B65M2 Datasheet (PDF)

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AOTF20B65M2

AOTF20B65M2TM650V, 20A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 4.1. Size:1283K  aosemi
aotf20b65m1.pdf pdf_icon

AOTF20B65M2

AOTF20B65M1TM650V, 20A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 5.1. Size:576K  aosemi
aotf20b65ln2.pdf pdf_icon

AOTF20B65M2
AOTF20B65M2

AOTF20B65LN2TM 650V, 20A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very low VCE(sat)VCE(sat) (TJ=25 1.54VC) Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Low Turn-Of

 8.1. Size:331K  aosemi
aotf20n40.pdf pdf_icon

AOTF20B65M2
AOTF20B65M2

AOTF20N40400V,20A N-Channel MOSFETGeneral Description Product Summary VDS500@150The AOTF20N40 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

Otros transistores... AOTF10B65M2 , AOTF10B65MQ2 , AOTF15B60D2 , AOTF15B65M2 , AOTF15B65M3 , AOTF15B65MQ1 , AOTF20B65LN2 , AOTF20B65M1 , HGTG30N60A4 , AOTF5B65M1 , AOTF5B65M2 , AOTF8B65MQ1 , AOTS40B65H1 , , , , .

 

 
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Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
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