Справочник IGBT. AOTF20B65M2

 

AOTF20B65M2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AOTF20B65M2
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.1 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 32 nS
   Coesⓘ - Выходная емкость, типовая: 156 pF
   Qgⓘ - Общий заряд затвора, typ: 46 nC
   Тип корпуса: TO220F

 Аналог (замена) для AOTF20B65M2

 

 

AOTF20B65M2 Datasheet (PDF)

 ..1. Size:1308K  aosemi
aotf20b65m2.pdf

AOTF20B65M2

AOTF20B65M2TM650V, 20A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 4.1. Size:1283K  aosemi
aotf20b65m1.pdf

AOTF20B65M2

AOTF20B65M1TM650V, 20A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 5.1. Size:576K  aosemi
aotf20b65ln2.pdf

AOTF20B65M2
AOTF20B65M2

AOTF20B65LN2TM 650V, 20A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very low VCE(sat)VCE(sat) (TJ=25 1.54VC) Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Low Turn-Of

 8.1. Size:331K  aosemi
aotf20n40.pdf

AOTF20B65M2
AOTF20B65M2

AOTF20N40400V,20A N-Channel MOSFETGeneral Description Product Summary VDS500@150The AOTF20N40 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 8.2. Size:405K  aosemi
aot20s60 aob20s60 aotf20s60.pdf

AOTF20B65M2
AOTF20B65M2

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 8.3. Size:325K  aosemi
aotf20s60l.pdf

AOTF20B65M2
AOTF20B65M2

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 8.4. Size:324K  aosemi
aotf20s60.pdf

AOTF20B65M2
AOTF20B65M2

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 8.5. Size:540K  aosemi
aotf20n60.pdf

AOTF20B65M2
AOTF20B65M2

AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.6. Size:462K  aosemi
aotf20c60p.pdf

AOTF20B65M2
AOTF20B65M2

AOTF20C60P600V,20A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max

 8.7. Size:263K  aosemi
aotf20c60.pdf

AOTF20B65M2
AOTF20B65M2

AOT20C60/AOB20C60/AOTF20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max

 8.8. Size:251K  inchange semiconductor
aotf20n40.pdf

AOTF20B65M2
AOTF20B65M2

isc N-Channel MOSFET Transistor AOTF20N40FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.9. Size:252K  inchange semiconductor
aotf20s60l.pdf

AOTF20B65M2
AOTF20B65M2

isc N-Channel MOSFET Transistor AOTF20S60LFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 8.10. Size:252K  inchange semiconductor
aotf20s60.pdf

AOTF20B65M2
AOTF20B65M2

isc N-Channel MOSFET Transistor AOTF20S60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.11. Size:252K  inchange semiconductor
aotf20n60.pdf

AOTF20B65M2
AOTF20B65M2

isc N-Channel MOSFET Transistor AOTF20N60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.12. Size:252K  inchange semiconductor
aotf20c60p.pdf

AOTF20B65M2
AOTF20B65M2

isc N-Channel MOSFET Transistor AOTF20C60PFEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONGeneral Lighting for LED and CCFLAC/DC Power supplies for Ind

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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